| PART |
Description |
Maker |
| MTP10N60E7 ON2541 MTP10N60E7-D |
TMOS 7 E-FET™ High Energy Power FET
TMOS 7 E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 10 AMPERES 600 VOLTS
|
ON Semiconductor
|
| MTB9N25E MTB9N25E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 9.0 AMPERES 250 VOLTS
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| MTH8N50E |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
|
MOTOROLA[Motorola, Inc]
|
| MTB4N80E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MTV6N100E MTV6N100E_D ON2675 MTV6N100E-D |
TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount N-Channel Enhancement - Mode Silicon Gate
TMOS POWER FET 6.0 AMPERES 1000 VOLTS RDS(on) = 1.5 OHM
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| MTV32N20E MTV32N20E_D ON2673 MTV32N20E-D |
TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount N-Channel Enhancement - Mode Silicon Gate
TMOS POWER FET 32 AMPERES 200 VOLTS RDS(ON) = 0.075 OHM
From old datasheet system
|
ON Semiconductor
ETC
Motorola, Inc
|
| MTD6N10E ON2512 MTD6N10E-D |
TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 6.0 AMPERES 100 VOLTS RDS(on) = 0.400 OHM
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| MTP4N40E MTP4N40E-D |
TMOS POWER FET 4.0 AMPERES 400 VOLTS RDS(on) = 1.8 OHM 4 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
|
Motorola Mobility Holdings, Inc.
Motorola, Inc
ON Semiconductor
|
| IRF530_D ON0283 IRF530-D IRF530/D |
100V4A TMOS Power Field Effect Transistor （N-Channel Enhancement Mode Silicon Gate100V4A TMOS功率场效应管（N沟道增强型硅门）)
TMOS POWER FET 14 AMPERES
From old datasheet system
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
|
Motorola, Inc.
ON Semiconductor
|
| MMFT5P03HD ON2230 MMFT5P03HDT3 ON2229 |
TMOS MEDIUM POWER FET 5.2 AMPERES 30 VOLTS
From old datasheet system
TMOS P-CHANNEL FIELD FEECT TRANSISTOR
|
MOTOROLA[Motorola, Inc]
|
| MTD20N06V MTD20N06 MTD20N06V_D ON2486 MTD20N06V-D |
TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHM TMOS是功率场效应晶体00安培RDS（on）\u003d 0.080欧姆
From old datasheet system
TMOS V Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
|
Motorola Mobility Holdings, Inc.
Motorola, Inc
ON Semiconductor
|
| MMFT2N25E |
High Energy Power FET
|
ON Semiconductor
|
